The 5th Symposium on Carbon Materials Technology for SiC Semiconductors
On April 26th, the 5th "SiC Semiconductor Carbon Material Technology Seminar" hosted by Qingdao Huajin New Materials Technology Development Co., Ltd. (hereinafter referred to as "Huajin New Materials") opened at the Qingdao Lijing Hotel. Over 500 representatives from more than 300 institutions, including well-known experts, scholars, and related enterprises in the semiconductor carbon material industry, attended the conference. At the conference, Guo Quangui, Chief Scientist of Huajin New Materials, released the company's special graphite material solution for silicon carbide crystal growth. The company's isostatic graphite material for silicon carbide crystal growth has comprehensively surpassed foreign high-end products in process technology, product performance, and other aspects, breaking through the "bottleneck" technical barriers and promoting the localization of high-end special graphite materials.
The isostatic graphite material for silicon carbide crystal growth released by the company is mainly used in the production of special graphite products such as heating elements, crucibles, and guide rings for silicon carbide crystal growth, achieving comprehensive surpassing of high-end foreign products in terms of process technology and product performance.
In 2023, the domestic silicon carbide industry will enter a stage of rapid development. A total of 121 silicon carbide related projects were announced throughout the year, with a cumulative investment of over 160 billion yuan, including various links in the industrial chain such as substrate preparation of raw materials, epitaxial growth, chip manufacturing, packaging and testing, as well as key consumables and equipment supply. It is worth noting that silicon carbide chips, as the core link of the industrial chain, have a project investment of up to 79.6 billion yuan, an increase of 100% compared to 2022. Special graphite, as the core substrate for preparing silicon carbide, benefits from the rapid development of the entire industry and has broad prospects for future development.
Faced with the vast development space of special graphite for silicon carbide, the company deeply integrates industry, academia, research and application, and actively promotes the localization of third-generation special graphite materials for semiconductors. As a subsidiary of Xinhua Jin Group, Huajin New Materials has strong technological research and development capabilities. The company has established a high-level technology research and development team led by Chief Scientist Guo Quangui, consisting of more than 10 master's and doctoral talents with backgrounds in materials science, chemistry, and applied physics, providing a solid talent foundation for the company's technological innovation and product development. At the same time, the company has established a close cooperation relationship with Shanxi Institute of Coal Chemistry, Chinese Academy of Sciences. Through the transformation of technological achievements, the company has successfully realized the localization of the third generation of special graphite materials for semiconductors, broken the foreign technological monopoly, and made important contributions to the independent research and development of semiconductor materials and industrial upgrading in China.